Wet chemical etching of the (111)In and % MathType!MTEF!2!1!+- % feaagaart1ev2aaatCvAUfKttLearuqr1ngBPrgarmWu51MyVXgatC % vAUfeBSjuyZL2yd9gzLbvyNv2CaeHbd9wDYLwzYbItLDharyavP1wz % ZbItLDhis9wBH5garqqtubsr4rNCHbGeaGqiVu0Je9sqqrpepC0xbb % L8F4rqqrFfpeea0xe9Lq-Jc9vqaqpepm0xbba9pwe9Q8fs0-yqaqpe % pae9pg0FirpepeKkFr0xfr-xfr-xb9adbaqaaeGaciGaaiaabeqaam % aaeaqbaaGcbaWaaeWaaeaacuaIXaqmgaqeaiqbigdaXyaaraGafGym % aeJbaebaaiaawIcacaGLPaaaaaa!3F6C! $$ \left( {\bar 1\bar 1\bar 1} \right) $$ Sb planes of InSb substrates

Author:

Eminov Sh. O.,Jalilova Kh. D.,Mamedova E. A.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Metals and Alloys,Inorganic Chemistry,General Chemical Engineering

Reference17 articles.

1. Rogalsky, A., Infrared Detectors: An Overview, Infrared Phys. Technol., 2002, vol. 43, nos. 3–5, pp. 187–210.

2. Bloom, I. and Nemirowsky, Y., Bulk Lifetime Determination of Etch Thinned InSb Wafers for Two-Dimensional Infrared Focal Plane Array, IEEE Trans. Electron Devices, 1992, vol. 39, no. 4, pp. 809–812.

3. Mazurkevich, Ya.S., Zozulya, N.I., Kostyuk, L.S., and Zozulya, Yu.I., Etching and Properties of {111} InSb Planes, Izv. Akad, Nauk SSSR, Neorg. Mater., 1975, vol. 11, no. 4, pp. 611–617.

4. Gorelik, S.S. and Dashevskii, M.Ya., Materialovedenie poluprovodnikov i metallovedenie (Semiconductor Materials Research and Physical Metallurgy), Moscow: Metallurgiya, 1973.

5. Cho, Sl., Um, Y.H., and Kim, Y.K., Bi Epitaxy on Polar InSb (111)A/B Faces, J. Vac. Sci. Technol. A, 2002, vol. 20, no. 4, pp. 1191–1194.

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