1. Vorotilov, K.A., Mukhortov, V.M., and Sigov, A.S., Integrirovannye segnetoelektricheskie ustroistva (Integrated Ferroelectric Devices), Sigov, A.S., Ed., Moscow: Energoatomi-zdat, 2011.
2. Gritsenko, V.A. and Islamov, D.R., Fizika dielektricheskikh plenok: mekhanizmy transporta zaryada i fizicheskie osnovy priborov pamyati (Physics of Dielectric Films: Charge Transport Mechanisms and Physical Foundations of Memory Devices), Novosibirsk: Parallel’, 2017.
3. Mukhortov, V.M., Golovko, Yu.I., and Tolmachev, G.N., Preparation of single-crystal mixed oxide nanofilms via atom–cluster–crystal three-dimensional ordering, Vestn. Yuzhn. Nauchn. Tsentra Ross. Akad. Nauk, 2006, vol. 2, no. 1, pp. 30–36.
4. Zinchenko, S.P., Stryukov, D.V., Pavlenko, A.V., and Mukhortov, V.M., The effect of a Ba0.2Sr0.8TiO3 sublayer on the structure and electric characteristics of lead zirconate titanate films on the Si(001) substrate, Tech. Phys. Lett., 2020, vol. 46, no. 12. pp. 1196–1199. https://doi.org/10.1134/S1063785020120159
5. Stryukov, D.V., Mukhortov, V.M., Golovko, Yu.I., and Biryukov, S.V., Specific features of the ferroelectric state in two-layer barium strontium titanate-based heterostructures, Phys. Solid State, 2018, vol. 60, no. 1, pp. 115–119. https://doi.org/10.1134/S1063783418010250