1. Bulygina, E.V., Makarchuk, V.V., Panfilov, Yu.V., et al., Nanorazmernye struktury: klassifikatsiya, formirovanie i issledovanie (Nanostructures: Classification, Formation, and Characterization), Moscow: Sains-Press, 2006.
2. Kusyak, N.V., Tomashyk, Z.F., and Tomashyk, V.M., Liquid-phase etching of indium antimonide with bromine- releasing H2O2–HBr–organic acid solutions, Nov. Tekhnol., 2005, vol. 3, no. 9, pp. 12–16.
3. Tomashyk, Z.F., Shelyuk, I.A., Tomashyk, V.N., et al., Dynamic chemical polishing of GaAs, GaSb, InAs, and InSb crystals with H2O2–HBr–lactic acid etchants, Vopr. Khim. Khim. Tekhnol., 2009, no. 5, pp. 117–120.
4. Bryce, C. and Berk, D., A kinetic study of gallium arsenide in H2O2–NH4OH–H2O solutions, Ind. Eng. Chem. Res., 1996, vol. 35, no. 12, pp. 4464–4470.
5. Kusyak, N.V., Tomashyk, Z.F., Tomashyk, V.N., et al., Dissolution of indium arsenide and indium antimonide in the K2Cr2O7–HBr–HCl–H2O system, Ukr. Khim. Zh., 2002, vol. 68, no. 1, pp. 11–14.