Electrical and structural characteristics of metamorphic In0.38Al0.62As/In0.37Ga0.63As/In0.38Al0.62As HEMT nanoheterostructures-Reference-Cited by-同舟云学术

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Electrical and structural characteristics of metamorphic In0.38Al0.62As/In0.37Ga0.63As/In0.38Al0.62As HEMT nanoheterostructures

Published:2013-11 Issue:6 Volume:58 Page:914-919
ISSN:1063-7745
Container-title:Crystallography Reports
language:en
Short-container-title:Crystallogr. Rep.

Author:

Galiev G. B.,Klimov E. A.,Klochkov A. N.,Maltsev P. P.,Pushkarev S. S.,Zhigalina O. M.,Imamov R. M.,Kuskova A. N.,Khmelenin D. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1134/S1063774513060114.pdf

Reference8 articles.

1. S. Bollaert, Y. Cordier, M. Zaknoune, et al., Solid-State Electron. 44, 1021 (2000).

2. M. Malmkvist, S. Wang, and J. Grahn, IEEE Trans. Electron Devices 56(1), 126 (2009).

3. Y. Cordier, S. Bollaert, M. Zaknoune, et al., Jpn. J. Appl. Phys. 38, 1164 (1999).

4. G. B. Galiev, S. S. Pushkarev, I. S. Vasil’evskii, et al., Semiconductors 47(7), 997 (2013).

5. P. A. Midgley and M. Weyland, Ultramicroscopy 96, 413 (2003).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-resolution X-ray diffractometry and transmission electron microscopy as applied to the structural study of InAlAs/InGaAs/InAlAs multilayer transistor nanoheterostructures;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2016-05

2. Electrophysical characteristics and structural parameters of metamorphic HEMT nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As containing superlattices with different numbers of periods in the metamorphic buffer;Crystallography Reports;2014-05

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