HIGH-TEMPERATURE ANNEALING OF SILICON SUBOXIDE THIN FILMS OBTAINED BY GAS-JET ELECTRON BEAM PLASMA CHEMICAL VAPOR DEPOSITION-Reference-Cited by-同舟云学术

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HIGH-TEMPERATURE ANNEALING OF SILICON SUBOXIDE THIN FILMS OBTAINED BY GAS-JET ELECTRON BEAM PLASMA CHEMICAL VAPOR DEPOSITION

Published:2022-11 Issue:5 Volume:63 Page:757-764
ISSN:0021-8944
Container-title:Journal of Applied Mechanics and Technical Physics
language:en
Short-container-title:J Appl Mech Tech Phy

Author:

Baranov E. A.,Zamchiy A. O.,Lunev N. A.,Merkulova I. E.,Volodin V. A.,Sharafutdinov M. R.,Shapovalova A. A.

Publisher

Pleiades Publishing Ltd

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics

Link

https://link.springer.com/content/pdf/10.1134/S0021894422050030.pdf

Reference25 articles.

1. Y. Baba, T. Sekiguchi, I. Shimoyama, and N. Hirao, “Electronic Structures of Silicon Monoxide Film Probed by X-ray Absorption Spectroscopy," Surf. Sci. 612, 77–81 (2013).

2. B. H. Lai, Ch. H. Cheng, and G. R. Lin, “Electroluminescent Wavelength Shift of Si-Rich SiO $$_{x}$$ Based Blue and Green MOSLEDs Induced by O/Si Composition Si-QD Size Variations," Opt. Mater. Express 3, 166–175 (2013).

3. D. Deligiannis, J. Van Vliet, R. Vasudevan, et al., “Passivation Mechanism in Silicon Heterojunction Solar Cells with Intrinsic Hydrogenated Amorphous Silicon Oxide Layers," J. Appl. Phys. 121, 085306 (2017).

4. A. Mehonic, M. S. Munde, W. H. Ng, et al., “Intrinsic Resistance Switching in Amorphous Silicon Oxide for High Performance SiO $$_{x}$$ ReRAM Devices," Microelectron. Eng. 178, 98–103 (2017).

5. R. Garcia-Hernansanz, E. Garcı́a-Hemme, D. Montero, et al., “Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells," IEEE J. Photovoltaics 6, 1059–1064 (2016).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. INFLUENCE OF CURRENT DENSITY ON THE STRUCTURE OF AMORPHOUS SILICON SUBOXIDE THIN FILMS UNDER ELECTRON-BEAM ANNEALING;Journal of Applied Mechanics and Technical Physics;2023-10

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