A Study of the Radiation Hardness of Si and SiC Detectors Using a Xe Ion Beam-Reference-Cited by-同舟云学术

A Study of the Radiation Hardness of Si and SiC Detectors Using a Xe Ion Beam

Published:2018-11 Issue:6 Volume:61 Page:769-771
ISSN:0020-4412
Container-title:Instruments and Experimental Techniques
language:en
Short-container-title:Instrum Exp Tech

Author:

Hrubčín L.,Gurov Yu. B.,Zaťko B.,Ivanov O. M.,Mitrofanov S. V.,Rozov S. V.,Sandukovsky V. G.,Semin V. A.,Skuratov V. A.

Publisher

Pleiades Publishing Ltd

Subject

Instrumentation

Link

http://link.springer.com/content/pdf/10.1134/S0020441218060192.pdf

Reference6 articles.

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4. Bloch, P., Cheremukhin, A., Golubkov, S., Golutvin, I., Egorov, N., Konjkov, K., Kozlov, Y., Peisert, A., Sidorov, A., and Zamiatin, N., IEEE Trans. Nucl. Sci., 2002, vol. NS-49, p. 321. doi 10.1109/TNS.2002. 998662

5. Dubecký, F., Gombia, E., Ferrari, C., Zat’ko, B., Vanko, G., Baldini, M., Kovac, J., Bacek, D., Kovac, P., Hrkut, P., and Necas, V., J. Instrum., 2012, vol. 7, p. P09005. doi 10.1088/1748-0221/7/09/P09005

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