Hot-hole lateral transport in a two-dimensional GaAs/Al0.3Ga0.7As structure-Reference-Cited by-同舟云学术

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Hot-hole lateral transport in a two-dimensional GaAs/Al0.3Ga0.7As structure

Published:2001-04 Issue:4 Volume:35 Page:433-435
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Ivanov Yu. L.,Elizarov I. V.,Ustinov V. M.,Zhukov A. E.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1365189.pdf

Reference6 articles.

1. V. Ya. Aleshkin, A. A. Andronov, A. V. Antonov, et al., Mater. Sci. Forum 297–298, 261 (1999).

2. Yu. L. Ivanov, V. M. Ustinov, A. E. Zhukov, et al., in Proceedings of the International Conference on Nanostructure Physics and Technology, St. Petersburg, 1999, p. 435.

3. Yu. L. Ivanov, G. V. Churakov, V. M. Ustinov, et al., Solid-State Electron. 40, 391 (1996).

4. I. V. Altukhov, M. S. Kagan, K. A. Korolev, and V. P. Sinis, Zh. Éksp. Teor. Fiz. 103, 1829 (1993) [JETP 76, 903 (1993)].

5. Yu. L. Ivanov, G. V. Churakov, V. M. Ustinov, and A. E. Zhukov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 29(9), 1702 (1995) [Semiconductors 29, 887 (1995)].

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