Study of radiation-induced damage to type III–V semiconductor compounds irradiated with γ quanta and protons using positron annihilation spectroscopy-Reference-Cited by-同舟云学术

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Study of radiation-induced damage to type III–V semiconductor compounds irradiated with γ quanta and protons using positron annihilation spectroscopy

Published:2012-11 Issue:6 Volume:6 Page:964-970
ISSN:1027-4510
Container-title:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Grafutin V. I.,Britkov I. M.,Britkov O. M.,Evstaf’ev S. S.,Ilyukhina O. V.,Myasishcheva G. G.,Prokop’ev E. P.,Timoshenkov S. P.,Funtikov Yu. V.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

http://link.springer.com/content/pdf/10.1134/S1027451012050084.pdf

Reference21 articles.

1. E. P. Prokop’ev, “Researches in Slow Positron Physics Area. Positron Annihilation is a New Method of the Matter Structure Study,” Dep. TsNII Electronica No. R-4367 (Moscow, 1986).

2. S. E. Bochkarev, L. A. Ivanyutin, V. P. Komlev, et al., Sov. Phys. Solid State 23, 118 (1981).

3. P. Colombino, B. Fiscella, and L. Trossi, Nuovo Cim. A 27, 589 (1963).

4. S. A. Abagyan, P. U. Arifov, N. Yu. Arutyunov, et al., Sov. Phys. Semicond. 13, 1051 (1979).

5. S. A. Abagyan, P. U. Arifov, N. Yu. Arutyunov, et al., Elektron. Tekh., Ser. Mater., No. 11, 27 (1982).

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