Heterosegregation on the surface of a gallium arsenide single crystal: Gallium nitride phase formation in nitrogen- and argon-gas flows-Reference-Cited by-同舟云学术

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Heterosegregation on the surface of a gallium arsenide single crystal: Gallium nitride phase formation in nitrogen- and argon-gas flows

Published:2015-05 Issue:3 Volume:9 Page:581-589
ISSN:1027-4510
Container-title:Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
language:en
Short-container-title:J. Synch. Investig.

Author:

Tomashpolsky Yu. Ya.,Matyuk V. M.,Sadovskaya N. V.

Publisher

Pleiades Publishing Ltd

Subject

Surfaces, Coatings and Films

Link

http://link.springer.com/content/pdf/10.1134/S1027451015030350.pdf

Reference9 articles.

1. Yu. Ya. Tomashpolsky, Surface Automatic Segregation in Chemical Compounds (Nauchnyi mir, Moscow, 2013) [in Russian].

2. R. Kh. Akchurin and A. A. Marmalyuk, Materialovedenie, No. 9, 950 (1999).

3. H. Okumura, Jpn. J. Appl. Phys., 7565 (2006).

4. S. M. Khanna, J. Webb, H. Tang, A. J. Houdayer, and C. Carlone, IEEE Trans. Nucl. Sci. 47, 2322 (2000).

5. G. A. Sukach, V. V. Kidalov, M. B. Kotlyarevskii, and E. P. Potapenko, Tech. Phys. 48, 437 (2003).

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface Segregation of the Composition in Gallium-Nitride Films;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2019-11

2. Composition, Morphology and Mechanisms of the Formation of Oxygen-Containing Phases in Surface Heterosegregation Processes;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2019-05

3. Growth of Gallium Nitride Micro- and Nanocrystallites on the Surface of Gallium Arsenide;Inorganic Materials;2018-11

4. Segregation Phenomena on the Crystal Surface of Chemical Compounds;Russian Journal of Physical Chemistry A;2018-05-29

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