Effect of low-temperature interphase charge transport at the Si/SiO2 interface on the photoresponse of silicon barrier structures-Reference-Cited by-同舟云学术

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Effect of low-temperature interphase charge transport at the Si/SiO2 interface on the photoresponse of silicon barrier structures

Published:2000-10 Issue:10 Volume:34 Page:1177-1182
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Bochkareva N. I.,Khorev S. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1317579.pdf

Reference19 articles.

1. N. I. Bochkareva and A. V. Klochkov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 82 (1998) [Semiconductors 32, 71 (1998)].

2. N. I. Bochkareva, Fiz. Tekh. Poluprovodn. (St. Petersburg) 28, 290 (1994) [Semiconductors 28, 175 (1994)].

3. N. I. Bochkareva and A. V. Klochkov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 1432 (1998) [Semiconductors 32, 1277 (1998)].

4. N. I. Bochkareva and S. A. Khorev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 1340 (1999) [Semiconductors 33, 1212 (1999)].

5. V. V. Voronkov, G. I. Voronkova, V. P. Kalinushkin, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 18, 938 (1984) [Sov. Phys. Semicond. 18, 584 (1984)].

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