1. Henry, C.H., Petroff, P.M., Logan, R.A., and Merritt, F.R., J. Appl. Phys., 1978, vol. 102, p. 3721.
2. Kretuz, E.W., Wiedmann, N., Jandeleit, J., and Hoffmann, D., J. Crystal Growth, 2000, vol. 210, p. 313.
3. Rosenberg, P., Reichert, P., Du, J., Fouksman, M., and Zhou, H., High-Power Diode Laser Technology and Applications V. Proc. SPIE, 2007, vol. 6456, p. 645618–1.
4. Gribkovskii, V.P., Poluprovodnikovye lazery: Ucheb. posobie po spets. “Radiofizika i elektronika” (Semiconductor Lasers. A Tutorial on Spec. “Radiophysics and Electronics”), Minsk: Universitetskoe, 1988.
5. Sergeev, V.S., Kuznetsov, O.A., and Zakharov, N.P., Napryazheniya i deformatsii v elementakh mikroskhem (Stresses and Deformations in Elements of Microcircuits), Moscow: Radio i Svyaz’, 1987.