On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures-Reference-Cited by-同舟云学术

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On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures

Published:2015-08 Issue:8 Volume:49 Page:1099-1103
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Aleksandrov P. A.,Belova N. E.,Demakov K. D.,Shemardov S. G.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782615080023.pdf

Reference19 articles.

1. S. S. Lau, J. W. Mayer, and T. W. Sigmon, USA Patent No. 4177084 (1979).

2. I. Golecki, USA Patent No. 4588447 (1986).

3. M. L. Burgener and R. E. Reedy, USA Patent No. 5416043 (1995).

4. P. A. Aleksandrov, K. D. Demakov, S. G. Shemardov, and Yu. Yu. Kuznetsov, Nano-Mikrosist. Tekh., No. 3, 54 (2008).

5. P. A. Aleksandrov, K. D. Demakov, S. G. Shemardov, and Yu. Yu. Kuznetsov, Semiconductors 43, 599 (2009).

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1. Implantation of Silicon Ions into Sapphire: Low Doses;Semiconductors;2020-08

2. Application of ion implantation for the modification of silicon-on-sapphire epitaxial systems, their structure, and properties;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2017-07

3. Microstructural study of He+-implanted and thermally annealed silicon-on-sapphire layers;Crystallography Reports;2017-07

4. Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation;Semiconductors;2016-08

5. On Relation between Porosity of Epitaxial Layer and Quantity of Radiation Defects Generated during Radiation Processing in a Multilayer Structure;Journal of Nanoscience;2016-07-10

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