I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x-Reference-Cited by-同舟云学术

I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

Published:2009-04 Issue:4 Volume:43 Page:416-418
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Saidov A. S.,Leyderman A. Yu.,Usmonov Sh. N.,Kholikov K. T.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782609040022.pdf

Reference11 articles.

1. A. S. Saidov, A. Sh. Razzakov, V. A. Risaeva, and E. A. Koschanov, Mater. Chem. Phys. 68, 1 (2001).

2. V. M. Andreev, L. M. Dolginov, and D. N. Tret’yakov, Liquid-Phase Epitaxy in Technology of Semiconductor Devices (Sov. Radio, Moscow, 1975) [in Russian].

3. M. Hansen and K. Anderko, Constitution of Binary Alloys (Toronto, London, New York, 1958), vol. II.

4. A. S. Saidov, M. S. Saidov, and É. A. Koshchanov, Liquid-Phase Epitaxy of Compensated Layers of Gallium Arsenide and Alloys on its Basis (Fan, Tashkent, 1986) [in Russian].

5. V. I. Stafeev, Zh. Tekh. Fiz. 28(9), 1631 (1958) [Sov. Tech. Phys. 3, 1502 (1958)].

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Obtaining new types of compounds between silicon and cadmium sulfide;E3S Web of Conferences;2023

2. Technology of fabrication of CdS_xTe_1-x solid solution on silicon substrate;E3S Web of Conferences;2023

3. Obtaining new types of compounds between silicon and cadmium sulfide;E3S Web of Conferences;2023

4. Technology of fabrication of CDS_XTe_1-X solid solution on silicon substrate;E3S Web of Conferences;2023

5. Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure;Semiconductor physics, quantum electronics and optoelectronics;2019-06-19