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Electrical properties of layered FeGaInS4 single crystals with an alternating current

  • Published:2009-11 Issue:11 Volume:43 Page:1407-1409
  • ISSN:1063-7826
  • Container-title:Semiconductors
  • language:en
  • Short-container-title:Semiconductors

Author:

Niftiev N. N.,Tagiev O. B.,Muradov M. B.,Mamedov F. M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. R. N. Bekimbetov, Yu. V. Rud’, and M. A. Tairov, Fiz. Tekh. Poluprovodn. 21, 1051 (1987) [Sov. Phys. Semicond. 21, 642 (1987)].

2. N. N. Niftiev, O. B. Tagiev, and G. M. Niftiev, Neorg. Mater. 32, 291 (1996) [Inorg. Mater. 32, 258 (1996)].

3. N. N. Niftiev, M. A. Alidzhnaov, O. B. Tagiev, and M. B. Muradov, Fiz. Tekh. Poluprovodn. 37, 173 (2003) [Semiconductors 37, 165 (2003)].

4. A. Memo, W. Kwarteng-Acheampong, and H. Heauseler, Mater. Res. Bull. 38, 1057 (2003).

5. N. N. Niftiev, Fiz. Tekh. Poluprovodn. 38, 522 (2004) [Semiconductors 38, 505 (2004)].

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