Polarization photoluminescence study of the complex VGaTeAs in n-type GaAs in the temperature range 77

Polarization photoluminescence study of the complex VGaTeAs in n-type GaAs in the temperature range 77–230 K

Published:1997-09 Issue:9 Volume:31 Page:908-915
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Gutkin A. A.,Reshchikov M. A.,Sedov V. E.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187267.pdf

Reference19 articles.

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3. N. S. Averkiev, A. A. Gutkin, E. B. Osipov, M. A. Reshchikov, and V. R. Sosnovskii, Fiz. Tekh. Poluprovodn. 26, 1269 (1992) [Sov. Phys. Semicond. 26, 708 (1992)].

4. A. A. Gutkin, M. A. Reshchikov, V. E. Sedov, and V. R. Sosnovskii, Proc. Estonian Acad. Sci. Phys. Math. 44, 212 (1995).

5. A. A. Gutkin, N. S. Averkiev, M. A. Reshchikov, and V. E. Sedov, in Defects in Semiconductors 18, edited by M. Suezawa and H. Katayama-Yoshida (Materials Science Forum, Vol. 196–201, Part 1) (Trans. Tech. Publ., Zurich, 1995), p. 231.

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