Author:
Matveenko O. S.,Gnatyuk D. L.,Bugaev A. S.,Pavlov A. Yu.,Gamkrelidze S. A.,Galiev R. R.,Zuev A. V.,Fedorov Yu. V.,Lavrukhin D. V.,Mikhalev A. O.,Zenchenko N. K.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Gallium Nitride (GaN) Physics, Devices and Technology, Medjdoub, F. and Iniewski, K., Eds., Boca Raton, FL: CRC, 2016, p. 372.
2. Deo, N., High performance transmitters for small satellites for data transmission and remote sensing, in Proceedings of the 2019 IEEE Aerospace Conference, Big Sky, MT, USA,
2019, pp. 1–6.
3. Arutyunyan, S.S., Pavlov, A.Yu., Pavlov, V.Yu., Tomosh, K.N., and Fedorov, Yu.V., On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs, Semiconductors, 2016, vol. 50, no. 8, pp. 1117–1122.
4. Pavlov, V.Yu. and Pavlov, A.Yu., Technologies for formation of the alloyed and unalloyed ohmic contacts to the heterostructures on the basis of GaN. Review, Nano- Mikrosist.
Tekh., 2016, vol. 18, no. 10, pp. 635–644.
5. Pavlov, A.Yu., Pavlov, V.Yu., Slapovskii, D.N., Arutyunyan, S.S. Fedorov, Yu.V., and Mal’tsev, P.P., Nonalloyed ohmic contacts for high-electron-mobility transistors based on AlGaN/GaN heterostructures, Russ. Microelectron., 2017, vol. 46, no. 5, pp. 316–322.