1. Galperin, V.A., Danilkin, E.V., and Mochalov, A.I., Protsessy plazmennogo travleniya v mikro- i nanotekhnologiyakh (Plasma Etching Processes in Micro- and Nanotechnologies), Timoshenkov, S.P., Ed., Moscow: BINOM, 2018.
2. Danilin, B.S. and Kireev, V.Yu., Primenenie nizkotemperaturnoi plazmy dlya travleniya i ochistki materialov (Application of Low-Temperature Plasma for Etching and Cleaning of Materials), Danilin, B.S., Ed., Moscow: Energoatomizdat, 1987.
3. Bauerfeldt, G.F. and Arbilla, G., Kinetic analysis of the chemical processes in the decomposition of gaseous dielectrics by a non-equilibrium plasma. Part 1: CF4 and CF4/O2, J. Braz. Chem. Soc., 2000, vol. 11, no. 2, p. 121.
4. Yeom, G.Y. and Kushner, M.J., Si/SiO2 etch properties using CF4 and CHF3 in radio frequency cylindrical magnetron discharges, Appl. Phys. Lett., 1990, vol. 56, pp. 857–859.
5. Handbook of Plasma Processing Technology, Rossnagel, S.M., Cuomo, J.J., and Westwood, W.D., Eds., Park Ridge: Noyes, 1990.