Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Bean, J.C., Arbitrary doping profiles produced by Sbdoped Si MBE, Appl. Phys. Lett., 1978, vol. 33, pp. 654–656.
2. Gossmann, H.-J. and Schubert, E.F., Delta doping in silicon, Crit. Rev. Sol. St. Mater. Sci., 1993, vol. 18, pp. 1–67.
3. Jorke, H., Surface segregation of Sb on Si(100) during molecular beam epitaxy growth, Surf. Sci., 1988, vol. 193, pp. 569–578.
4. Kuznetsov, V.P. and Andreev, A.Yu., Impurity accumulation on the Si(001) surface during vacuum epitaxy, Poverkhnost. Fiz., Khim., Mekh., 1990, no. 3, pp. 49–52.
5. Nützel, J.F. and Abstreiter, G., Comparison of P and Sb as n-dopants for Si molecular beam epitaxy, J. Appl. Phys., 1995, vol. 78, pp. 937–940.
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