Current switching in bistable structures: Heavily doped n +-polysilicon-tunnel-oxide layer-n-silicon-Reference-Cited by-同舟云学术

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Current switching in bistable structures: Heavily doped n +-polysilicon-tunnel-oxide layer-n-silicon

Published:1997-03 Issue:3 Volume:39 Page:402-406
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Osipov V. Yu.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1129866.pdf

Reference11 articles.

1. S. K. Lai, P. V. Dressendorfer, T. P. Ma, and R. C. Barker, Appl. Phys. Lett. 38, 41 (1981).

2. E. R. Fossum and R. C. Barker, IEEE Trans. Electron. Devices ED-31, 1168 (1984).

3. A. Ya. Vul’, T. L. Makarova, V. Yu. Osipov, Yu. S. Zinchik, and S. K. Boitsov, Fiz. Tekh. Poluprovodn. 26, 111 (1992) [Sov. Phys. Semicond. 26, 62 (1992)].

4. S. K. Boitsov and V. Yu. Osipov, Mikroélektronika 24, 13 (1995).

5. S. K. Boitsov, V. Yu. Osipov, and T. L. Makarova, Mikroélektronika 22, 86 (1993).

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