The Role of Built-in Electric Fields in the InGaN∕GaN Quantum-Well Emission-Reference-Cited by-同舟云学术

The Role of Built-in Electric Fields in the InGaN∕GaN Quantum-Well Emission

Published:2005 Issue:7 Volume:47 Page:1388
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Krivolapchuk V. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1992623.pdf

Reference8 articles.

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2. X. A. Cao, S. F. LeBoeuf, and L. B. Rowland, Appl. Phys. Lett. 82(21), 3614 (2003).

3. F. Bernardini and V. Fiorentini, Phys. Rev. B 56(16), R10024 (1997).

4. V. Yu. Davydov and A. A. Klyuchikhin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 38(8), 897 (2004) [Semiconductors 38 (8), 861 (2004)].

5. V. V. Krivolapchuk and M. M. Mezdrogina, Fiz. Tverd. Tela (St. Petersburg) 46(12), 2129 (2004) [Phys. Solid State 46 (12), 2201 (2004)].

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