Optically pumped “immersion-lens” infrared light emitting diodes based on narrow-gap III–V semiconductors-Reference-Cited by-同舟云学术

Optically pumped “immersion-lens” infrared light emitting diodes based on narrow-gap III–V semiconductors

Published:2002-07 Issue:7 Volume:36 Page:828-831
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Aidaraliev M.,Zotova N. V.,Karandashev S. A.,Matveev B. A.,Remennyi M. A.,Stus’ N. M.,Talalakin G. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1493757.pdf

Reference17 articles.

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3. A. Krier, H. H. Gao, and V. V. Sherstnev, J. Appl. Phys. 85(12), 8419 (1999).

4. C. Roux, E. Hadji, and J.-L. Pautrat, Appl. Phys. Lett. 75(24), 3763 (1999).

5. N. V. Zotova, S. A. Karandashev, B. A. Matveev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 35(3), 371 (2001) [Semiconductors 35, 357 (2001)].

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