Thermoelectric properties of hydrogen ion-irradiated silicon crystals under ultrahigh pressures of up to 20 GPa-Reference-Cited by-同舟云学术

Thermoelectric properties of hydrogen ion-irradiated silicon crystals under ultrahigh pressures of up to 20 GPa

Published:2006-01 Issue:1 Volume:48 Page:47-50
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Ovsyannikov S. V.,Shchennikov V. V.,Antonova I. V.,Shchennikov Vs. V.,Shamin S. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063783406010100.pdf

Reference23 articles.

1. S. K. Deb, M. Wilding, M. Somayazulu, and P. F. McMillan, Nature (London) 414, 528 (2001).

2. F. Yang and P. Fei, Semicond. Sci. Technol. 19, 1165 (2004).

3. S. E. Grillo, M. Ducarroir, M. Nadal, E. Tournie, and J. P. Faurie, J. Phys. D: Appl. Phys. 36, L5 (2003).

4. V. R. Galakhov, I. V. Antonova, S. N. Shamin, V. I. Aksenova, V. I. Obodnikov, A. K. Gutakovskiĭ, and V. P. Popov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 598 (2002) [Semiconductors 36, 568 (2002)].

5. O. V. Naumova, I. V. Antonova, V. P. Popov, and V. F. Stas’, Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 93 (2003) [Semiconductors 37, 92 (2003)].

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermoelectric Power of Different Phases and States of Silicon at High Pressure;Journal of Electronic Materials;2013-05-07

2. Raman characterization of hydrogen ion implanted silicon: “High-dose effect”?;Physica B: Condensed Matter;2008-10

3. Pressure-induced transition in a heavy fermion YbPd2Si2;Journal of Physics and Chemistry of Solids;2008-09

4. High-Pressure Study of Metallocenes, M(η5-C5H5)2(M = Fe, Co);Journal of the Physical Society of Japan;2007-01