Epitaxial layers of nickel fluoride on Si(111): Growth and stabilization of the orthorhombic phase-Reference-Cited by-同舟云学术

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Epitaxial layers of nickel fluoride on Si(111): Growth and stabilization of the orthorhombic phase

Published:2015-08 Issue:8 Volume:57 Page:1647-1652
ISSN:1063-7834
Container-title:Physics of the Solid State
language:en
Short-container-title:Phys. Solid State

Author:

Banshchikov A. G.,Golosovskii I. V.,Krupin A. V.,Koshmak K. V.,Sokolov N. S.,Chernenkov Yu. P.,Yagovkina M. A.,Ulin V. P.,Tabuchi M.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106378341508003X.pdf

Reference16 articles.

1. W. H. Meiklejohn and C. P. Bean, Phys. Rev. 102, 1413 (1956).

2. V. Skumryev, S. Stoyanov, Y. Zhang, G. Hadjipanayis, D. Givord, and J. Nogués, Nature (London) 423, 850 (2003).

3. A. K. Kaveev, O. V. Anisimov, A. G. Banshchikov, N. F. Kartenko, V. P. Ulin, and N. S. Sokolov, J. Appl. Phys. 98, 013519 (2005).

4. R. N. Kyutt, A. G. Banshchikov, A. K. Kaveev, N. S. Sokolov, A. A. Lomov, Y. Ohtake, M. Tabuchi, and Y. Takeda, J. Phys. D: Appl. Phys. 40, 4896 (2007).

5. L. M. Azzaria and F. Dachille, J. Phys. Chem. 65, 889 (1961).

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