Numerical simulation of the physical processes in silicon semiconductor p-n junctions in the presence of the ultrashort-pulse electromagnetic radiation-Reference-Cited by-同舟云学术

Numerical simulation of the physical processes in silicon semiconductor p-n junctions in the presence of the ultrashort-pulse electromagnetic radiation

Published:2013-07 Issue:7 Volume:58 Page:737-744
ISSN:1064-2269
Container-title:Journal of Communications Technology and Electronics
language:en
Short-container-title:J. Commun. Technol. Electron.

Author:

Berdyshev A. V.,Mesheryakov S. A.

Publisher

Pleiades Publishing Ltd

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S106422691306003X.pdf

Reference33 articles.

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2. K. Yu. Sakharov, Oscillators of Ultrashort Electromagnetic Pulses and Methods for the Measurement of Their Characteristics (MIEM, Moscow, 2006) [in Russian].

3. High-Power Ultrashortpulse and Ultrabroadband Electromagnetic Radiation and the Induced Damage and Noise in the Electronic Devices for Data Transceiving, Processing, and Storage, Ed. by V. G. Gerasimenko (Nauchnaya Kniga, Voronezh, 2008) [in Russian].

4. A. V. Berdyshev, Antenny, No. 5, 57 (2001).

5. A. V. Berdyshev, Yu. L. Koziratskii, A. P. Yarygin, et al., Radiotekhnika, No. 7, 51 (2000).

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