A Mössbauer study of Fe impurity atoms in gallium arsenide-Reference-Cited by-同舟云学术

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A Mössbauer study of Fe impurity atoms in gallium arsenide

Published:2003-08 Issue:8 Volume:37 Page:889-893
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Seregin P. P.,Stepanova T. R.,Kozhanova Yu. V.,Volkov V. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1601655.pdf

Reference10 articles.

1. N. M. Kolchanova, D. N. Nasledov, and G. N. Talalakin, Fiz. Tekh. Poluprovodn. (Leningrad) 4, 134 (1970) [Sov. Phys. Semicond. 4, 106 (1970)].

2. G. B. Il’menkov, I. F. Mironov, D. N. Nasledov, et al., Fiz. Tverd. Tela (Leningrad) 13, 1407 (1971) [Sov. Phys. Solid State 13, 1176 (1971)].

3. V. K. Isaev-Ivanov, V. F. Masterov, D. N. Nasledov, and V. K. Yarmarkin, Fiz. Tverd. Tela (Leningrad) 16, 2068 (1974) [Sov. Phys. Solid State 16, 1342 (1974)].

4. V. F. Masterov, F. S. Nasredinov, S. A. Nemov, and P. P. Seregin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 840 (1996) [Semiconductors 30, 450 (1996)].

5. V. F. Masterov, F. S. Nasredinov, S. A. Nemov, and P. P. Seregin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 884 (1996) [Semiconductors 30, 472 (1996)].

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nematicity of correlated systems driven by anisotropic chemical phase separation;Physical Review Materials;2018-11-02

2. A Mössbauer study of Eu donor centers in PbS;Semiconductors;2006-01

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