On the transformation of the potential barrier at a GaAs/Au interface during heat treatment-Reference-Cited by-同舟云学术

On the transformation of the potential barrier at a GaAs/Au interface during heat treatment

Published:1999-11 Issue:11 Volume:33 Page:1221-1224
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Bednyi B. I.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187853.pdf

Reference20 articles.

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2. M. P. Patkar, T. P. Chin, J. M. Woodall, M. S. Lundstrom, and M. R. Melloch, Appl. Phys. Lett. 66, 1412 (1995).

3. T. A. Bryantseva, V. E. Lyubchenko, and E. O. Yunevich, Radiotekh. Élektron., No. 8, 1306 (1995).

4. N. A. Maleev, V. V. Volkov, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, M. F. Kokorev, and V. M. Ustinov, Fiz. Tekh. Poluprovodn. 33, 346 (1999) [Semiconductors 33, 345 (1999)].

5. S. A. Kostylev, E. F. Prokhorov, and A. T. Ukolov, Transport Phenomena in Thin-Film Gallium-Arsenide Structures (Naukova dumka, Kiev, 1990), Chap. 2, p. 34.

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