1. Georgobiani, A.N., Radautsan, S.I., and Tiginyanu, I.M., High Energy-Gap Semiconductors: Optical and Photoelectric Properties and Application Trends, Fiz. Tekhn. Poluprovodn., 1985, vol. 19,issue 2, pp. 193–212.
2. Rud’, V.Yu., Rud’, Yu.V., Vaipolin, A.A., Bondar’, I.V., and Fernelius, N., Photosensitive Structure on CdGa2S4 Single Crystals, Fiz. Tekhn. Poluprovodn., 2003, vol. 37, issue 11, pp. 1321–1328 [Semicond. (Engl. Transl.), 2003, vol. 37, no. 11, p. 1283].
3. Bondar’, I.V., Rud’, V.Yu., and Rud’, Yu.V., Growth and Properties of CdGa2S4 Single Crystals, Neorg. Mater., 2004, vol. 40, no. 2, pp. 144–148 [Inorg. Mater. (Engl. Transl.), 2004, vol. 40, no. 2, p. 102].
4. Fan, L. and Guo, R., Fabrication of Novel CdIn2S4 Hollow Spheres via Facile Hydrothermal Process, J. Phys. Chem. C, 2008, vol. 112, no. 29, pp. 10700–10706.
5. Rajpure, K.Y., Mathe, V.L., and Bhosale, C.H., Photoelectrochemical Investigation on Spray Deposited n-CdIn2S4 Thin Films, Bull. Mater. Sci., 1999, vol. 22, no. 5, pp. 927–931.