Electrical properties of surface-barrier diodes based on CdZnTe-Reference-Cited by-同舟云学术

Electrical properties of surface-barrier diodes based on CdZnTe

Published:2003-02 Issue:2 Volume:37 Page:227-232
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kosyachenko L. A.,Rarenko I. M.,Zakharchuk Z. I.,Sklyarchuk V. M.,Sklyarchuk E. F.,Solonchuk I. V.,Kabanova I. S.,Maslyanchuk E. L.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1548671.pdf

Reference19 articles.

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2. E. N. Arkad’eva, O. A. Matveev, S. M. Ryvkin, and Yu. V. Rud’, Fiz. Tekh. Poluprovodn. (Leningrad) 1, 805 (1967) [Sov. Phys. Semicond. 1, 669 (1967)].

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4. Eiji Sakai, Nucl. Instrum. Methods Phys. Res. 196, 121 (1982).

5. K. Mochizuki, T. Yoshida, K. Igaki, et al., Mater. Lett. 3, 219 (1985).

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