Effect of diffusion on the velocity of stationary impact ionization waves in semiconductors-Reference-Cited by-同舟云学术

Effect of diffusion on the velocity of stationary impact ionization waves in semiconductors

Published:2007-11 Issue:5 Volume:86 Page:308-312
ISSN:0021-3640
Container-title:JETP Letters
language:en
Short-container-title:Jetp Lett.

Author:

Kyuregyan A. S.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S0021364007170067.pdf

Reference10 articles.

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4. A. S. Kyuregyan, Fiz. Tekh. Poluprovodn. (St. Petersburg) 41, 761 (2007) [Semiconductors 41, 737 (2007)].

5. A. I. Zakharov, I. G. Persiantsev, V. D. Pis’mennyĭ, et al., Prikl. Mekh. Tekh. Fiz., No. 1, 56 (1973).

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