P‐32: Feasibility of Laterally‐Emitting Thin‐Film Electroluminescent (LETFEL) Devices for an Opto‐Electronic Integrated Circuit (OEIC)-Reference-Cited by-同舟云学术

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P‐32: Feasibility of Laterally‐Emitting Thin‐Film Electroluminescent (LETFEL) Devices for an Opto‐Electronic Integrated Circuit (OEIC)

Published:2000-05 Issue:1 Volume:31 Page:648-651
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Theng P. S.¹,Cranton W. M.¹,Thomas C. B.¹,Tsakonas C.¹,Stevens R.²

Affiliation:

1. Dept. of Electrical/Electronic Engineering, The Nottingham Trent University, Nottingham NG1 4BU, U. K.

2. Central Microstructures Facility, Rutherford Appleton Laboratory, Oxon OX11 0QX, U. K.

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1889/1.1833030

Reference12 articles.

1. Modeling a.c. thin-film electroluminescent devices

2. Z.K.Kun D.Leksell P.R.Malmberg J.AsarsandG.B.Brandt Proc. SID p.270(1986)

3. R.Stevens W.M.Cranton C.B.Thomas; U.S. Patent No. 5 910 706 (June 1999)

4. TFEL optoelectronic integrated circuit on Si

5. C.N.King;Intl Conf Consumer Electronics ch. 184 p 264 (1996)

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