P-81 : Two Zones Method of Furnace-Growing Technology to Control Grain Size of In2O3 Film on Gallium Nitride LED-Reference-Cited by-同舟云学术

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P-81 : Two Zones Method of Furnace-Growing Technology to Control Grain Size of In2O3 Film on Gallium Nitride LED

Published:2010 Issue:1 Volume:41 Page:1552
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest

Author:

Lian Jan-Tian,Tsao Kai-Chieh,Su Chun-Wei,Chiang Chin-I,Li Tzung-Yang,Liu Chun-Shin,Lin Tai-Yuan,Tsou Chien-Lung

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1889/1.3500007/fullpdf

Reference4 articles.

1. Growth and luminescence of elongated In2O3 micro- and nanostructures in thermally treated InN

2. Structural relation and epitaxial properties of hexagonal InN and oxidized cubic In2O3

3. Low-temperature In2O3nanowire luminescence properties as a function of oxidizing thermal treatments

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. P-105: Advanced Furnace-Growing Technology to Fabricate Nanowire Type In2O3 Film on Gallium Nitride LEDs;SID Symposium Digest of Technical Papers;2011-06

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