Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling-Reference-Cited by-同舟云学术

Onset of plastic relaxation in the growth of Ge on Si(001) at low temperatures: Atomic-scale microscopy and dislocation modeling

Published:2013-10-18 Issue:16 Volume:88 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Marzegalli Anna,Brunetto Matteo,Salvalaglio Marco,Montalenti Francesco,Nicotra Giuseppe,Scuderi Mario,Spinella Corrado,De Seta Monica,Capellini Giovanni

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.88.165418/fulltext

Reference29 articles.

1. Structural properties of self-organized semiconductor nanostructures

2. Heteroepitaxial growth of Ge on (100) Si by ultrahigh vacuum, chemical vapor deposition

3. Strain relaxation in high Ge content SiGe layers deposited on Si

4. Silicon epitaxy by low-energy plasma enhanced chemical vapor deposition

5. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures

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