Interacting donors inn-type GaP studied with Raman scattering and ESR techniques
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.6909/fulltext
Reference19 articles.
1. The complex form of donor energy levels in gallium phosphide
2. Observation of Optical Phonons Bound to Neutral Donors
3. Infrared Absorption of Localized Longitudinal-Optical Phonons
4. Phonons bound to sulphur complexes in GaP
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1. Electrically detected magnetic resonance investigations of gallium phosphide green light‐emitting diodes;Journal of Applied Physics;1996-10-15
2. Low-temperature bolometric detection of transmission in 4 mm and 8 mm EPR: application to the GaP:S system;Measurement Science and Technology;1995-12-01
3. Screening of longitudinal optical phonons by carriers in quantum dots;Solid State Communications;1995-07
4. EPR Identification of the Trigonal Ti2+Ga-Sp Pair in GaP;physica status solidi (b);1994-04-01
5. Photo-ESR Study of the DX to Shallow Donor Conversion in Te Doped AlxGa1-xAs;Acta Physica Polonica A;1993-10
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