Interpretation of deep-level optical spectroscopy and deep-level transient spectroscopy data: Application to irradiation defects in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.30.5822/fulltext
Reference47 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. Nonradiative capture and recombination by multiphonon emission in GaAs and GaP
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4. Optical characterization of the deep Cr level in GaAs
5. Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction band
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