Influence of miniband widths and interface disorder on vertical transport in superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.10625/fulltext
Reference19 articles.
1. Enlarged wells as probes to study superlattices
2. Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications
3. Vertical transport in GaAs/Ga1-xAlxAs superlattices observed by photoluminescence
4. Observation of Carrier Localization in Intentionally Disordered Gaas/Gaalas Superlattices
5. Disorder-induced localization in superlattices
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2. Vertical Hole Transport and Carrier Localization inInAs/InAs1−xSbxType-II Superlattice Heterojunction Bipolar Transistors;Physical Review Applied;2017-02-13
3. Kinetics of vertical transport and localization of electrons in strained semiconductor supperlattices;Journal of Experimental and Theoretical Physics;2015-08
4. Optical studies of carriers’ vertical transport in the alternately-strained ZnS0.4Se0.6/CdSe superlattice;Semiconductors;2015-03
5. Anderson localization and Monte Carlo simulation of vertical transport in disordered finite superlattices;Journal of Applied Physics;1997-11
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