Many-body effects in highlyp-type modulation-dopedGaAs/AlxGa1−xAsquantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.2794/fulltext
Reference18 articles.
1. Band-gap shifts in heavilyp-type doped semiconductors of the zinc-blende and diamond type
2. Band-gap renormalization in semiconductor quantum wells containing carriers
3. Exchange-correlation energy of a hole gas including valence band coupling
4. Coulomb Energy of a Quasi-2D Electron Gas in a Quantum Well
5. Observation of a Many-Body Edge Singularity in Quantum-Well Luminescence Spectra
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1. Effects of repulsive and attractive ionized impurities on the resistivity of semiconductor heterostructures in the quantum Hall regime;Physical Review B;2009-11-18
2. Radiative recombination spectra of p-type δ-doped GaAs∕AlAs multiple quantum wells near the Mott transition;Journal of Applied Physics;2008-06-15
3. Differential surface photovoltage spectroscopy of δ-doped GaAs/AlAs multiple quantum wells below and close to Mott transition;physica status solidi (b);2008-01
4. Anharmonicity and asymmetry of Landau levels for a disordered two-dimensional electron gas;Physical Review B;2006-12-06
5. Energy band structure and spectral gain characteristics of dilute-nitride zinc blende InGaNAs quantum wells embedded in GaAs and GaNAs barriers;Journal of Applied Physics;2006-10
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