Unoccupied states in the band gap ofδ-doped Si in GaAs probed by Auger resonance spectroscopy-Reference-Cited by-同舟云学术

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Unoccupied states in the band gap ofδ-doped Si in GaAs probed by Auger resonance spectroscopy

Published:2005-02-16 Issue:7 Volume:71 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Jackson M. D.,Thornton J. M. C.,Lewis D.,Robinson A.,Fahy M.,Aviary A.,Weightman P.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.075313/fulltext

Reference56 articles.

1. Delta-doping of semiconductors

2. Photoelectron Spectroscopy

3. Artificial band discontinuities at GaAs homojunctions

4. Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission

5. Silicon segregation in delta‐doped GaAs characterized by Auger electron spectroscopy

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1. Observation of the relaxation of the excited core-hole states in solids prior to the core-hole decay by the coincidence photoelectron spectroscopy;Chemical Physics;2013-06

2. The participant Coster–Kronig preceded Auger transition in the resonant L2,3-M2,3V Auger electron spectrum of Ti metal;Journal of Electron Spectroscopy and Related Phenomena;2008-02

3. Al Kα and Cu Kα1 excited XPS of vanadium oxide and VF3 powders: Measurement of the V 1s – KLL Auger parameters;Journal of Electron Spectroscopy and Related Phenomena;2008-01

4. Localization of electrons in the sugar/phosphate backbone in DNA investigated via resonant Auger decay spectra;Physical Review B;2006-11-28

5. New feature in the Auger peak of adsorbed oxygen;Surface Science;2006-09

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