Effect of uniaxial stress on the polarization of light emitted fromGaN∕AlNquantum dots grown on Si(111)
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.77.155322/fulltext
Reference39 articles.
1. Stimulated emission from optically pumped GaN quantum dots
2. From visible to white light emission by GaN quantum dots on Si(111) substrate
3. GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range
4. Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect
5. Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes
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2. Theoretical optimization of multi-layer InAs/GaAs quantum dots subject to post-growth thermal annealing for tailoring the photoluminescence emission beyond 1.3 μm;Journal of Applied Physics;2012-07-15
3. Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111);physica status solidi (c);2012-02-14
4. Polarized light from excitonic recombination in selectively etched GaN/AlN quantum dot ensembles on Si(111);Journal of Physics D: Applied Physics;2011-12-01
5. POLARONIC EFFECTS IN WURTZITE GaN/AlxGa1-xN QUANTUM WELLS;International Journal of Modern Physics B;2011-06-20
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