Adsorption, thermal reaction, and desorption of disilane on Ge(111)-c(2×8)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.49.1836/fulltext
Reference25 articles.
1. Core-level photoemission studies of surfaces, interfaces, and overlayers
2. Adsorption and thermal reactions of disilane and the growth of Si films on Ge(100)-(2×1)
3. Thermal reactions of disilane on Si(100) studied by synchrotron-radiation photoemission
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hydrogen-induced metallization on Ge(111) c(2×8);Applied Surface Science;2006-05
2. Ge(011)-c(8×10) surface structure and hydrogen desorption pathways: a temperature-programmed desorption and scanning tunneling microscopy study;Surface Science;2000-06
3. Atomic-level investigation of the growth of Si/Ge by ultrahigh vacuum chemical vapor deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1997-05
4. Reactions of Disilane on Cu(111): Direct Observation of Competitive Dissociation, Disproportionation, and Thin Film Growth Processes;Langmuir;1995-10
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