Intensity and temperature dependence of the steady-state light-induced defect density ina-Si:H
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.12800/fulltext
Reference13 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
3. Mechanisms of thermal equilibration in doped amorphous silicon
4. Thermal-equilibrium processes in amorphous silicon
5. Band tails, entropy, and equilibrium defects in hydrogenated amorphous silicon
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1. Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon;Physical Review B;2009-03-18
2. Saturation of the metastable defect density in amorphous silicon semiconductor;Journal of Non-Crystalline Solids;1997-01
3. Defect generation by hole injection in hydrogenated amorphous silicon;Solid State Communications;1996-11
4. Metastable defect creation and annealing under illumination in intrinsic hydrogenated amorphous silicon deposited from helium‐silane mixtures;Philosophical Magazine B;1996-01
5. Saturation behavior of the defect density in hydrogenated amorphous silicon by continuous and pulsed light illumination;Applied Physics Letters;1995-05-29
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