Ab initiostudy of self-diffusion in silicon over a wide temperature range: Point defect states and migration mechanisms
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.81.193203/fulltext
Reference28 articles.
1. Point defects and dopant diffusion in silicon
2. Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
3. Vacancy-Assisted Diffusion in Silicon: A Three-Temperature-Regime Model
4. Experimental Evidence of the Vacancy-Mediated Silicon Self-Diffusion in Single-Crystalline Silicon
5. Mechanism and energetics of self-interstitial formation and diffusion in silicon
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