Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS2-Reference-Cited by-同舟云学术

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Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS2

Published:2013-02-15 Issue:8 Volume:87 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Rice C.,Young R. J.,Zan R.,Bangert U.,Wolverson D.,Georgiou T.,Jalil R.,Novoselov K. S.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.87.081307/fulltext

Reference36 articles.

1. Single-layer MoS2

2. Two-dimensional atomic crystals

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

5. Emerging Photoluminescence in Monolayer MoS2

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