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Identification of P dopants at nonequivalent lattice sites of theSi(111)−(2×1)surface

  • Published:2007-09-26 Issue:12 Volume:76 Page:
  • ISSN:1098-0121
  • Container-title:Physical Review B
  • language:en
  • Short-container-title:Phys. Rev. B

Author:

Garleff J. K.,Wenderoth M.,Ulbrich R. G.,Sürgers C.,Löhneysen H. v.,Rohlfing M.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scanning Tunneling Microscopy and Spectroscopy of Semiconductor Materials;Reference Module in Materials Science and Materials Engineering;2018

2. Organic Functionalization in Vacuum;Encyclopedia of Interfacial Chemistry;2018

3. Tunneling spectroscopy of a phosphorus impurity atom on the Ge(111)-(2 × 1) surface;Journal of Experimental and Theoretical Physics;2015-06

4. Confinement effects in π-bonded chains at group IV semiconductor (111) surfaces;Journal of Physics: Condensed Matter;2013-11-07

5. Ab initio study of surface electronic structure of phosphorus donor impurity on Ge(111)-(2×1) surface;JETP Letters;2013-06
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