Lyman spectrum of holes bound to substitutional 3d transition metal ions in a III-V host:GaAs(Mn2+,Co2+,orCu2+),GaP(Mn2+),andInP(Mn2+)

Author:

Tarhan Enver,Miotkowski I.,Rodriguez S.,Ramdas A. K.

Publisher

American Physical Society (APS)

Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. High efficiency gallium phosphide solar cells using TC-doped absorber layer;Physica E: Low-dimensional Systems and Nanostructures;2018-10

2. Impurity band conduction in Mn-doped p type InAs single crystal;Materials Science in Semiconductor Processing;2018-09

3. A Novel Theoretical Investigation of Electronic Structure and Half-Metallic Ferromagnetism in 3d (V)-Doped InP for Spintronic Applications;Journal of Superconductivity and Novel Magnetism;2016-02-27

4. Structural Parameters and Spin Filtering Properties of Ga1−x (M) x P compound;Journal of Superconductivity and Novel Magnetism;2016-01-15

5. Half-Metallic Ferromagnetic Property Related to Spintronic Applications in 3d (V, Cr, and Mn)-Doped GaP DMSs;Journal of Superconductivity and Novel Magnetism;2015-06-30

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