Investigation of defects in gallium arsenide using positron annihilation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.30.3355/fulltext
Reference37 articles.
1. Scattering-theoretic method for defects in semiconductors. I. Tight-binding description of vacancies in Si, Ge, and GaAs
2. Theoretical study of native defects in III-V semiconductors
3. Positron studies of condensed matter
4. Annihilation of Positrons in Electron-Irradiated Silicon Crystals
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