Silicon interband transitions observed atSi(100)−SiO2interfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.R1734/fulltext
Reference19 articles.
1. Intrinsic stress and stress gradients at the SiO2/Si interface in structures prepared by thermal oxidation of Si and subjected to rapid thermal annealing
2. Determination of interface layer strain of Si/SiO2 interfaces by reflectance difference spectroscopy
3. Identification of strained silicon layers at Si-SiO2interfaces and clean Si surfaces by nonlinear optical spectroscopy
4. Nonlinear optical spectroscopy at silicon interfaces
5. Electronic Transitions at Si(111)/SiO2and Si(111)/Si3N4Interfaces Studied by Optical Second-Harmonic Spectroscopy
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