X-ray crystallographic study of the optically active semiconductor(GaxIn1−x)2Se3
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.62.16549/fulltext
Reference11 articles.
1. Ordering in AIII2BVI3 compounds
2. Vacancy ordered structure of the III2VI3compound semiconductor (GaxIn1−x)2Se3studied by electron diffraction and microscopy
3. Crystal Structures and Phase Transformation in In2Se3Compound Semiconductor
4. Optical activity in the vacancy ordered III2VI3 compound semiconductor (Ga0.3In0.7)2Se3
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2. Isothermal sections of the quasi-ternary systems Ag2S(Se)–Ga2S(Se)3–In2S(Se)3 at 820 K and the physical properties of the ternary phases Ga5.5In4.5S15, Ga6In4Se15 and Ga5.5In4.5S15:Er3+, Ga6In4Se15:Er3+;Journal of Solid State Chemistry;2016-05
3. Electronic structure of (Ga55In45)2S300 and (Ga54.59In44.66Er0.75)2S300 single crystals;Journal of Materials Science: Materials in Electronics;2015-12-09
4. Phase equilibria in the quasiternary system Ag2S–Ga2S3–In2S3 and optical properties of (Ga55In45)2S300, (Ga54.59In44.66Er0.75)2S300 single crystals;Journal of Solid State Chemistry;2015-07
5. Phase equilibria in the quasi-ternary system Ag2Se–Ga2Se3–In2Se3 and physical properties of (Ga0.6In0.4)2Se3, (Ga0.594In0.396Er0.01)2Se3 single crystals;Journal of Solid State Chemistry;2014-02
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