Line-shape analysis of the reflectivity spectra of GaAs/(Ga,Al)As single quantum wells grown on (001)- and (311)-oriented substrates
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.2885/fulltext
Reference22 articles.
1. Experimental exciton binding energies in GaAs/AlxGa1−xAs quantum wells as a function of well width
2. Enhancement in Optical Transition in (111)-Oriented GaAs-AlGaAs Quantum Well Structures
3. Observation of the 2sstate excitons in (111)-oriented GaAs/AlxGa1−xAs quantum-well structures
4. OPTICAL PROPERTIES OF GaAs/AlGaAs MULTIPLE QUANTUM WELLS GROWN IN THE [111] CRYSTALLOGRAPHIC DIRECTION
5. Exciton binding energy in (Al,Ga)As quantum wells: Effects of crystal orientation and envelope-function symmetry
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3. Crystallographic input data for (001)-, (110)- and (111)-oriented superlattices;Acta Crystallographica Section B Structural Science;2012-07-17
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5. Spectroscopy studies by reflectance and photoluminescence on shallow quantum wells AlxGa1−xAs/GaAs types;Materials Science and Engineering: C;2002-09
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