Extended x-ray-absorption and electron-energy-loss fine-structure studies of the local atomic structure of amorphous unhydrogenated and hydrogenated silicon carbide-Reference-Cited by-同舟云学术

Extended x-ray-absorption and electron-energy-loss fine-structure studies of the local atomic structure of amorphous unhydrogenated and hydrogenated silicon carbide

Published:1988-12-15 Issue:18 Volume:38 Page:13099-13106
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kaloyeros Alain E.,Rizk Richard B.,Woodhouse John B.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.13099/fulltext

Reference38 articles.

1. Structure and properties of amorphous hydrogenated silicon carbide

2. Generation of amorphous-silicon structures with use of molecular-dynamics simulations

3. Multiple-scattering effects in theK-edge x-ray-absorption near-edge structure of crystalline and amorphous silicon

4. On energy differences between structurally different crystals

5. Ground state properties of the group IV ionic compound silicon carbide

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