Surface mass transport and island nucleation during growth of Ge on laser textured Si(001)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.125317/fulltext
Reference30 articles.
1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
2. Evolution of Ge islands on Si(001) during annealing
3. Coarsening of Self-Assembled Ge Quantum Dots on Si(001)
4. Mechanisms determining three-dimensional SiGe lsland density on Si(001)
5. Shape Transition in Growth of Strained Islands
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